We look forward to cooperating on further projects with TowerJazz,” said Dr. “TowerJazz’s SOI power process offers flexibility to optimize device options for our product design, and we are very satisfied with their advanced BCD technology and their strong local support in terms of fast response on our diverse needs. In addition, the process enables low leakage, improved latch-up and immunity that ultimately increases the reliability of operation at high temperatures and high voltages. This offering is highly suitable to meet the increasing demand for high voltage operation, multi-channel ICs and the 48V market trend that requires the ability of ICs to support up to 200V breakdown voltage, with a development roadmap designed to meet higher voltage demands.
TowerJazz’s 200V power SOI 0.18um platform provides highly integrated mixed-signal capabilities combined with noise and voltage isolation, smaller die size and negative voltages, making it an ideal solution for a wide range of end applications such as: automotive battery monitors, industrial gate drivers, consumer haptic drivers, AC/DC and medical ultra sound sensors.
#Save space on mac for eook driver#
KERI has completed a prototype of the single SiC MOSFET and expects to benefit customers by providing both the SiC MOSFET and the gate driver IC as an optimized set. KERI’s gate driver IC is expected to be a more efficient solution than the IGBT/SiC MOSFET offering as it enables higher operating speeds (500KHz) and a newly added short circuit protection function. These gate driver ICs are aimed for high-temperature, high-voltage applications such as white goods and electric vehicles which need power converters and inverters with high efficiency and high power density. MIGDAL HAEMEK, Israel and CHANGWON, Korea, Decem– TowerJazz, the global specialty foundry leader, today announced Korea Electrotechnology Research Institute ( KERI), a government research institute specializing in IC and system development for power and energy fields with advanced technology, has begun prototyping its gate driver IC based on TowerJazz’s advanced power SOI 0.18um platform. High temperature, high voltage gate driver IC dedicated to SiC MOSFETs for application in white goods and electric vehicles
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